退火温度对ZnO掺杂ITO薄膜性能的影响  

Influence of annealing temperature on properties of ZnO-doped ITO films

作　　者：闫其昂[1] 石培培[1] 严启荣[1] 牛巧利[1] 章勇[1] 

机构地区：[1]华南师范大学光电子材料与技术研究所,广东广州510631

出　　处：《光电子．激光》2012年第3期512-517,共6页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金(10904042);教育部留学回国人员科研启动基金(20091001);广东省自然科学基金(8521063101000007)资助项目

摘　　要：利用电子束蒸镀方法,在K8玻璃衬底上沉积ZnO掺杂ITO(ZnO-ITO)与ITO薄膜。研究不同退火温度对ZnO-ITO薄膜的微观结构的影响;对比分析了在不同退火温度条件下,ZnO-ITO和无掺杂ITO薄膜的光电性能。结果发现,ZnO-ITO薄膜具有较大的晶粒尺寸,随着退火温度的上升,晶体结构得到改善,表面粗糙度减小,薄膜的光电性能显著提高。ZnO-ITO薄膜经过500℃退火后得到最佳的综合性能,其表面均方根粗糙度(RMS)为32.52nm,电阻率为1.43×10-4Ω.cm;对442nm波长的光,透射率可达98.37%;与ITO薄膜相比,ZnO-ITO薄膜具有显著的抗PEDOT:PSS溶液腐蚀的能力。ZnOdoped indium tin oxide（ZnO.. ITO） and undoped ITO thin films were deposited on the ultrasonically cleaned K8 glass substrates by the electron-beam evaporation technique. The effect of annealing temperature on the microstrueture of ZnO-ITO thin films was investigated. The electrical and optical properties of ZnO-ITO and undoped ITO thin films have been contrastively analyzed. It is found that ZnOITO thin films show larger grain size and the crystalline structures become better; At the same time, the surface roughness gets lower with increasing annealing temperature. Further, the electrical and optical properties of ZnO-ITO thin films are remarkably improved. ZnO-ITO thin films annealed at 500 ℃ reveal the best comprehensive properties,including a root mean square roughness of 32.52 nm,a resistivity of 1.43 × 10 ^4 Ω · cm and a transmittance of 98. 37 % at 442 nm. Compared with undoped ITO films, the ZnO-ITO films show remarkable erosion-resisting ability to PEDOT： PSS.

关 键 词：ZnO掺杂ITO(ZnO-ITO)薄膜 电子束蒸发 退火温度 

分 类 号：O484.4[理学—固体物理] TB383[理学—物理]