考虑非均匀温度分布效应的缓冲器插入最优尺寸研究  

Study on optimal size of repeater insertion with ununiform temperature distribution

作　　者：王增[1] 董刚[2] 杨银堂[2] 李建伟[2] 

机构地区：[1]青岛大学物理科学学院,青岛266071 [2]西安电子科技大学微电子学院,西安710071

出　　处：《物理学报》2012年第5期126-132,共7页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60606006);国家杰出青年基金(批准号:60725415);西安电子科技大学基本科研业务费资助的课题~~

摘　　要：基于非均匀温度分布效应对互连延时的影响,提出了一种求解互连非均匀温度分布情况下的缓冲器最优尺寸的模型.给出了非均匀温度分布情况下的RC互连延时解析表达式,通过引入温度效应消除因子,得出了最优插入缓冲器尺寸以使互连总延时最优.针对90 nm和65 nm工艺节点,对所提模型进行了仿真验证,结果显示,相较于以往同类模型,本文所提模型由于考虑了互连非均匀温度分布效应,更加准确有效,且在保证互连延时最优的情况下有效地提高了芯片面积的利用.Based on the influence of nonuniform temperature distribution on interconnect delay, an analytical model to estimate the optimal size of repeaters inserting RC interconnect is presented in this paper. In the proposed analytical model the temperature distribution is taken into account and a temperature correction factor is introduced to modify the repeater size and obtain the optimal interconnect de- lay. Adopting parameters of 90 nm and 65 nm process technology, the proposed model is compared with the model without considering the temperature distribution. Results show that the new model is more accurate and saves the repeater insertion area with maximum values of 15.6% and 36.7% in 90 nm and 65 nm technology, respectively.

关 键 词：非均匀温度分布 缓冲器插入 最优尺寸 温度效应消除因子 

分 类 号：TN405[电子电信—微电子学与固体电子学]