InGaAs/GaAs应变量子阱激光器线宽展宽因子的理论研究  

Theoretical study of linewidth enhancement factor of InGaAs/GaAs strained quantum well lasers

作　　者：张帆[1] 李林[1] 马晓辉[1] 李占国[1] 隋庆学 高欣[1] 曲轶[1] 薄报学[1] 刘国军[1] 

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,长春130022 [2]总装备部装甲兵驻长春地区军事代表室,长春130103

出　　处：《物理学报》2012年第5期203-209,共7页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60976038;61006039);高功率半导体激光国家重点实验室基金(批准号:010602)资助的课题~~

摘　　要：详细地介绍了计算线宽展宽因子(α因子)的理论基础及推导过程,建立了α因子的简便模型.该模型分别考虑了带间跃迁、带隙收缩和自由载流子效应对α因子的影响,利用不同载流子浓度下的增益曲线得到光子能量随载流子浓度的变化速率以及微分增益,进而对α因子进行近似计算.模拟计算了InGaAs/GaAs量子阱激光器的增益曲线及α因子的大小,计算结果与文献报道的实验值相符.进一步讨论了InGaAs/GaAs量子阱阱宽及In组分对α因子的影响.结果表明,α因子随In组分和阱宽的增加而增加.A simple model of calculating the linewidth enhancement factor （a factor） is presented by introducing the correlative theory and its conversion formula of the a factor in detail. The contributions of interband transition, free carder absorption and band gap narrowing to the a factor are taken into account. Carder concentration and differential gain dependence of photon energy are obtained from the gain curves for different cartier concentrations. The gain curves and the a factor of InGaAs/GaAs quantum well are simulated, separately, and the results accord well with those reported in the literature. Subsequently discussed are two important parameters of InGaAs/GaAs quantum well laser containing quantum well width and In mole fraction. The results show that the increase of two parameters leads the a factor to increase.

关 键 词：INGAAS/GAAS 线宽展宽因子 应变量子阱 增益 

分 类 号：TN248.4[电子电信—物理电子学]