AlGaN/GaN HEMTs with 0.2μm V-gate recesses for X-band application  

作　　者：王冲 何云龙 郑雪峰 郝跃 马晓华 张进城 

机构地区：[1]Key Laboratory of Wide Band gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University

出　　处：《Journal of Semiconductors》2012年第3期24-27,共4页半导体学报（英文版）

基　　金：Project supported by the National Key Science & Technology Special Project,China(No.2008ZX01002-002);the Major Program and State Key Program of National Natural Science Foundation of China(Nos.60890191,60736033);the Fundamental Research Funds for the Central Universities,China(Nos.K50510250003,K50510250006)

摘　　要：AlGaN/GaN HEMTs with 0.2μm V-gate recesses were developed.The 0.2μm recess lengths were shrunk from the 0.6μm designed gate footprint length after isotropic SiN deposition and anisotropic recessed gate dry etching.The AlGaN/GaN HEMTs with 0.2μm V-gate recesses on sapphire substrates exhibited a current gain cutoff frequency f_t of 35 GHz and a maximum frequency of oscillation f_（max） of 60 GHz.At 10 GHz frequency and 20 V drain bias,the V-gate recess devices exhibited an output power density of 4.44 W/mm with the associated power added efficiency as high as 49%.AlGaN/GaN HEMTs with 0.2μm V-gate recesses were developed.The 0.2μm recess lengths were shrunk from the 0.6μm designed gate footprint length after isotropic SiN deposition and anisotropic recessed gate dry etching.The AlGaN/GaN HEMTs with 0.2μm V-gate recesses on sapphire substrates exhibited a current gain cutoff frequency f_t of 35 GHz and a maximum frequency of oscillation f_（max） of 60 GHz.At 10 GHz frequency and 20 V drain bias,the V-gate recess devices exhibited an output power density of 4.44 W/mm with the associated power added efficiency as high as 49%.

关 键 词：high electron mobility transistors ALGAN/GAN V-gate recess 

分 类 号：TN386[电子电信—物理电子学] TN304.23