Holding-voltage drift of a silicon-controlled rectifier with different film thicknesses in silicon-on-insulator technology  

作　　者：姜一波 曾传滨 杜寰 罗家俊 韩郑生 

机构地区：[1]Institute of Microelectronics,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2012年第3期38-41,共4页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(No.60927006)

摘　　要：This paper presents a new phenomenon,where the holding-voltage of a silicon-controlled rectifier acts as an electrostatic-discharge protection drift in diverse film thicknesses in silicon-on-insulator（SOI） technology. The phenomenon was demonstrated through fabricated chips in 0.18μm SOI technology.The drift of the holding voltage was then simulated,and its mechanism is discussed comprehensively through ISE TCAD simulations.This paper presents a new phenomenon,where the holding-voltage of a silicon-controlled rectifier acts as an electrostatic-discharge protection drift in diverse film thicknesses in silicon-on-insulator（SOI） technology. The phenomenon was demonstrated through fabricated chips in 0.18μm SOI technology.The drift of the holding voltage was then simulated,and its mechanism is discussed comprehensively through ISE TCAD simulations.

关 键 词：holding-voltage drift electrostatic discharge SILICON-ON-INSULATOR silicon-controlled rectifier 

分 类 号：TN304.12[电子电信—物理电子学]