锗硅碳合金中碳的应变缓解效应研究  

Investigation of the Carbon Effect on the Strain Relief of High Quality Si_(1-x-y)Ge_xC_y Alloys

作　　者：章国强[1] 黄靖云[1] 亓震[1] 卢焕明[1] 赵炳辉[1] 汪雷[1] 叶志镇[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《材料科学与工程》2000年第1期25-27,10,共4页Materials Science and Engineering

基　　金：国家自然科学基金重大项目 !6 9890 2 3 0 ;国家自然科学基金!6 96 86 0 0 2

摘　　要：SiGeC三元合金成为近年来人们研究的热点之一。处于替代位置的碳可以缓解SiGe合金的应变,同时调节其能带,在能带工程上提供了更大的灵活性。本文利用UHV/CVD技术生长了掺碳达2.2%的锗硅碳合金,获得了良好的外延层质量,并对碳的应变缓解效应进行了研究。SiGeC tenary alloys have raised up much interest recently, mainly because the incorporation of carbon in substitutional sites could make the strain of SiGe alloys relaxed and adjust the band gap as well. In this paper, SiGeC alloys with carbon of 2 2% percent were grown by the technique of UHV/CVD. Epilayer of high quality were grown and the strain relaxation effect of carbon was investigated.

关 键 词：锗硅碳合金 反变弛豫 外延生长 

分 类 号：TN304.26[电子电信—物理电子学]