一步掩膜法制备超低压ITO沟道纸上薄膜晶体管  

One-shadow-mask ultralow-voltage indium-tin-oxide thin-film transistors on paper substrates

作　　者：毛延凯[1] 蒋杰[1] 周斌[1] 窦威[1] 

机构地区：[1]教育部微纳光电子器件重点实验室化学生物传感与计量学国家重点实验室物理与微电子科学学院湖南大学,长沙410082

出　　处：《物理学报》2012年第4期402-406,共5页Acta Physica Sinica

基　　金：国家重点基础研究发展计划(973计划)(批准号:2007CB310500);国家自然科学基金(批准号:10874042)资助的课题~~

摘　　要：基于一步掩模法工艺制备了一种新型的纸上双电荷层超低压薄膜晶体管.在室温射频磁控溅射过程中,仅仅利用一块镍掩模板,就可同时沉积出氧化铟锡(ITO)源漏电极和ITO沟道.在此基础上,以等离子体增强化学气相沉积法(PECVD)合成的具有双电荷层效应的微孔SiO_2为栅介质,成功制备出以纸为衬底的超低压氧化物薄膜晶体管.这种晶体管显示出极好的性能:超低的工作电压1.5 V,场效应迁移率为20.1 cm^2/Vs,亚阈值斜率为188 mV/decade,开关电流比为5×10~5.这种基于全室温一步掩模法工艺制备的纸上氧化物薄膜晶体管具有工作电压低,工艺简单,成本低廉等优点,非常有望应用于未来便携式低功耗电子产品的制造中.A new kind of electric-double-layer indium-tin-oxide（ITO） thin-film transistor（TFT） is fabricated on a paper substrate by one-shadow -mask process.The channel layer can be simultaneously self-assembled between ITO source/drain electrodes by only one shadow mask during RF magnetron sputtering deposition at room temperature.Base on this,we choose microporous SiC2 with electric double layer effect as a gate dielectric,and successfully develop the ultralow-voltage oxide TFT on a paper substrate.The TFT exhibits a good performance with an ultralow operation voltage of 1.5 V,a field-effect mobility of 20.1 cm^2/Vs,a subthreshold swing of 188mV/decade,and a large on-off ratio of 5 x 105.The full-room-temperature oxide TFT on the paper substrate by one-shadow-mask process shows a lot of advantages,such as low operation voltage,simple device process,low cost,etc.Such a TFT is very promising for the application of low-power and portable electronic products in the future.

关 键 词：超低工作电压 一步掩模法 双电荷层 微孔SiO_2 

分 类 号：TN321.5[电子电信—物理电子学]