本征微晶硅薄膜的激活能特性研究  

Study on the Properties of Activation Energy of Intrinsic Microcrystalline Silicon Thin Film

作　　者：陈庆东[1] 王俊平[1] 马国利[1] 

机构地区：[1]滨州学院物理与电子科学系,山东滨州256603

出　　处：《滨州学院学报》2011年第6期59-62,共4页Journal of Binzhou University

基　　金：滨州学院科研基金项目(BZXYG1111)

摘　　要：利用激活能测试装置测量了VHF-PECVD高速沉积的本征微晶硅薄膜的激活能,结果表明,在不同沉积条件下制备的本征微晶硅薄膜的晶化处于非晶-微晶相变域附近,激活能都偏低,存在氧污染问题.给出了氧污染解决途径.The activation energy of intrinsic microcrystalline silicon thin film,which is deposited very fast by VHF - PECVD,were measured by activation energy testing equipment. The results showed that the intrinsic microcrystalline silicon thin film deposited on different conditions,and the crystalline vol- ume was in amorphous/microcrystalline transition zone, all activation energy on the low side. The prob- lem exists which films are contaminated by oxygen. We discuss some solutions to oxygen contamination.

关 键 词：VHF-PECVD 微晶硅 激活能 

分 类 号：TN304[电子电信—物理电子学]