基于NAND Flash的海量存储器的设计  

Design of Huge Capacity Memory Based on NAND Flash

作　　者：舒文丽[1] 吴云峰[1] 孙长胜[1] 吴华君[1] 唐斌[1] 

机构地区：[1]电子科技大学光电信息学院,成都610051

出　　处：《电子器件》2012年第1期107-110,共4页Chinese Journal of Electron Devices

基　　金：四川省应用基础研究项目(2009JY0054);2010年度"富通"翱翔计划项目(FTAX201007)

摘　　要：针对存储系统中对存储容量和存储带宽的要求不断提高,设计了一款高性能的超大容量数据存储器。该存储器采用NAND Flash作为存储介质,单板载有144片芯片,分为3组,每组48片,降低了单片的存储速度,实现了576 Gbyte的海量存储。设计采用FPGA进行多片NAND Flash芯片并行读写来提高读写带宽,使得大容量高带宽的存储器得以实现。针对NAND Flash存在坏块的缺点,提出了相应的管理方法,保证了数据的可靠性。In order to comply with the requirements of the memory capacity and bandwidth in storage system, a high capacity memory is designed. This memory uses NAND Flash as the storage medium and a single board has 144 pieces of NAND Flash, dividing into three groups with each group having 48 chips. This can reduce the speed of monolithic memory and achieve a huge capacity of 576 Gbyte. It also employs FPGA to expand the read ＆ write bandwidth by parallel operations on multiple pieces of Flash. Aiming at the shortcoming of bad block in NAND Flash, a management method is proposed to endure the reliability of the data.

关 键 词：NAND FLASH 海量存储 并行操作 坏块管理 ECC校验 

分 类 号：TN402[电子电信—微电子学与固体电子学]