Improvements on voltage-resistant performance of bipolar static induction transistor (BSIT) with buried gate structure  

作　　者：WANG YongShun FENG JingJing LIU ChunJuan WANG ZiTing WANG ZaiXing ZHANG CaiZhen 

机构地区：[1]School of Electronic and Information Engineering,Lanzhou Jiaotong University,Lanzhou 730070,China

出　　处：《Science China(Information Sciences)》2012年第4期962-970,共9页中国科学（信息科学）（英文版）

基　　金：supported by Scientific and Technological Supporting Program of Gansu Province(Grant No.097GKCA052)

摘　　要：The breakdown mechanism of power bipolar static induction transistor （BSIT） with buried gate structure is analyzed in depth. A power BSIT sample with high voltage-resistant capability has been designed and fabricated in this paper. The technological methods for improving high voltage perforn, ances are represented. The active region of BSIT is surrounded with a deep trench to avoid any probable influences of various defects on device performances. Two field-limiting ring-shape junctions and one channel termination ring-shape junction are arranged around the gate region to reduce the electric field intensity. The gate-source breakdown voltage BVGs of power BSIT has been increased to 110 V from previous value of 50-60 V, and its blocking voltage is increased to 1700 V. The optimal geometrical dimensions for achieving the maximum breakdown voltage BVGs and blocking voltage Vblock are also represented in the paper.The breakdown mechanism of power bipolar static induction transistor （BSIT） with buried gate structure is analyzed in depth. A power BSIT sample with high voltage-resistant capability has been designed and fabricated in this paper. The technological methods for improving high voltage perforn, ances are represented. The active region of BSIT is surrounded with a deep trench to avoid any probable influences of various defects on device performances. Two field-limiting ring-shape junctions and one channel termination ring-shape junction are arranged around the gate region to reduce the electric field intensity. The gate-source breakdown voltage BVGs of power BSIT has been increased to 110 V from previous value of 50-60 V, and its blocking voltage is increased to 1700 V. The optimal geometrical dimensions for achieving the maximum breakdown voltage BVGs and blocking voltage Vblock are also represented in the paper.

关 键 词：bipolar static induction transistor voltage-resistant capability PUNCH-THROUGH deep trench 

分 类 号：TN386.7[电子电信—物理电子学] TN383