云南高校图书馆联盟文献共享服务平台- PUNCH-THROUGH

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Numerical Analysis of Ice Rubble with a Freeze-Bond Model in Dilated Polyhedral Discrete Element Method被引量：1: 《Computer Modeling in Engineering & Sciences》2022年第1期1-22,共22页Biyao Zhai Lu Liu Shunying Ji; the National Key Research and Devel-opment Program of China(Grant No.2018YFA0605902);the National Natural Science Foun-dation of China(Grant Nos.20212024,11872136);China Postdoctoral Science Foundation(Grant No.2020M670746).; Freezing in ice rubble is a common phenomenon in cold regions,which can consolidate loose blocks and change their mechanical properties.To model the cohesive effect in frozen ice rubble,and to describe the fragmentati...; 关键词：Discrete element method dilated polyhedron bond-fracture model ice rubble freeze bonding punch-through tests

Bearing Capacity and Critical Punch-Through Depth of Spudcan on Sand Overlying Clay被引量：3: 《China Ocean Engineering》2014年第1期139-147,共9页刘君于龙周慧孔宪京; supported by the National Natural Science Foundation of China(Grant Nos.50978045,51121005 and 51209033); Spudcan may experience punch-through failure on strong over weak layered soils, such as sand overlying clay. A large deformation finite element method （LDFE） is used to simulate the penetration process of spudcan in...; 关键词：spudcan foundation PUNCH-THROUGH sand overlying clay double layer jack-up platform

New expressions for non-punch-through and punch-through abrupt parallel-plane junctions based on Chynoweth law被引量：1: 《Journal of Semiconductors》2013年第7期63-67,共5页黄海猛陈星弼; The relations among the breakdown voltage,the width and the concentration of the voltage-sustaining layer for the non-punch-through（NPT） and punch-through（PT） abrupt parallel-plane junctions have been reestablishe...; 关键词：abrupt parallel-plane junction impact ionization integral Chynoweth law Fulop law

A novel high-voltage light punch-through carrier stored trench bipolar transistor with buried p-layer被引量：4: 《Chinese Physics B》2012年第6期573-578,共6页张金平李泽宏张波李肇基; Project supported by the National Science and Technology Major Project of China （Grant No. 2011ZX02504-003） and the Fundamental Research Funds for the Central Universities, China （Grant No. ZYGX2011J024）.; A novel high-voltage light punch-through（LPT） carrier stored trench bipolar transistor（CSTBT） with buried p-layer（BP） is proposed in this paper.Since the negative charges in the BP layer modulate the bulk electr...; 关键词：carrier stored trench bipolar transistor light punch-through buried p-layer breakdown voltage

Improvements on voltage-resistant performance of bipolar static induction transistor (BSIT) with buried gate structure被引量：2: 《Science China(Information Sciences)》2012年第4期962-970,共9页WANG YongShun FENG JingJing LIU ChunJuan WANG ZiTing WANG ZaiXing ZHANG CaiZhen; supported by Scientific and Technological Supporting Program of Gansu Province(Grant No.097GKCA052); The breakdown mechanism of power bipolar static induction transistor （BSIT） with buried gate structure is analyzed in depth. A power BSIT sample with high voltage-resistant capability has been designed and fabricate...; 关键词：bipolar static induction transistor voltage-resistant capability PUNCH-THROUGH deep trench

Experimental study of the anode injection efficiency reduction of 3.3-kV-class NPT-IGBTs due to backside processes: 《Journal of Semiconductors》2012年第2期41-44,共4页Jiang Huaping Zhang Bo Liu Chuang Chen Wanjun Rao zugang Dong Bin; supported by the Major Specialized Program of National Science and Technology,China(No.2011ZX02706-003); The anode injection efficiency reduction of 3.3-kV-class non-punch-through insulated-gate bipolar transistors （NPT-IGBTs） due to backside processes is experimentally studied through comparing the forward blocking ca...; 关键词：non-punch-through IGBT anode injection efficiency reduction breakdown voltage

The breakdown mechanism of a high-side pLDMOS based on a thin-layer silicon-on-insulator structure: 《Chinese Physics B》2012年第1期524-528,共5页赵远远乔明王伟宾王猛张波; Project supported by National Natural Science Foundation of China(Grant No.60906038); A high-side thin-layer silicon-on-insulator （SOI） pLDMOS is proposed, adopting field implant （FI） and multiple field plate （MFP） technologies. The breakdown mechanisms of back gate （BG） turn-on, surface channe...; 关键词：field implant technology back gate punch-through surface channel punch-through avalanche breakdown

PbWO_4晶体探测器读出单元PIN硅光管PUNCH-THROUGH效应研究: 《中国原子能科学研究院年报》2001年第1期46-47,共2页IppolitovMikhail AlexandrovDmitri SiliriakYuri MankoVladislav BogoliovbskiMikhail SadovskiSergei KenstantinovSergei PetrovViacheslav ArneKlovning 周书华袁坚李成波孟秋英; 利用CERN/SPS加速器提供的5、10、20、30、40 GeV电子束和100 GeV的μ粒于束分别对PbWO4晶体探测器读出单元PIN硅光管存在的PUNCH-THROUGH效应进行了研究。图1是100GeV μ粒子束测得的能谱。图中左右峰分别为μ粒子能量沉积在PbWO4晶体...; 关键词：PbWO4晶体探测器读出单元 PIN硅光管 PUNCN-THROUGH效应

Study of the Non-desired Punch-through Effect of the PIN Diodes in the Readout Device of the PbWO_4 Crystal Detectors: 《Annual Report of China Institute of Atomic Energy》2001年第0期44-47,共4页IppolitovMikhail AlexandrovDmitri SiliriakYuri MankoVladislav BogoliovbskiMikhai1 SadovskiSergei KenstantinovSergei PetrovViacheslav ArneKlovning; The punch-through effect of the PIN diodes in the readout device of the PbWO4 crystal detectors was studied by using of Ee=5, 10, 20, 30, 40 GeV electron beam and Eμ=100 GeV μ beam on the CERN/SPS. Figure 1 is the e...; 关键词：DESIRED created READOUT CERN Figure absolute proton PARITY nuclei NORMALIZATION

Electric and thermal conduction mechanisms of submicron-structured Ni-ZrO_2 composites: 《Science China Mathematics》1995年第11期1377-1386,共10页范秋林胡行方郭景坤; the State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, China; The experimental results indicate that the Ni-ZrO2 composites synthesized with urn-sized Ni powder and nm-sized ZrO2 powder possess submicron structure. Based on the fractal theory, the relationship between the electr...; 关键词：SUBMICRON structure electronic PUNCH-THROUGH effect phonic scattering ABNORMAL resonance.

PUNCH-THROUGH