超快激光微构造硅的研究与应用  

The Research and Application of Ultrafastlaser Microstructured Silicon

作　　者：陈长水[1] 何慧丽[1] 李江华[1] 刘颂豪[1] 

机构地区：[1]华南师范大学信息光电子科技学院,广东广州510631

出　　处：《激光与光电子学进展》2012年第3期19-23,共5页Laser & Optoelectronics Progress

基　　金：国家自然科学基金(60878063);广东省自然科学基金重点项目(10251063101000001;8251063101000006)资助课题

摘　　要：在特定的气体氛围下,用一定能量密度的超短脉冲激光连续照射单晶硅片表面,或者离子注入在硅中引入硫族元素等方法,可在硅表面得到具有奇特光电性质的微米量级尖锥结构,该微锥结构被称为黑硅。这一新材料有奇特的光电性质,如对0.25～17μm波长的光有强烈的吸收,具有良好的场致发射特性等,为硅提供许多新的功能。Mazur教授预言这种新材料相当于60年前的半导体,在探测器、传感器、显示技术及微电子等领域都有重要的潜在应用价值,尤其在高效太阳能电池领域具有其他材料无可比拟的优越性。本文介绍了超快激光微构造硅的形成机理,研究进展、光电特性以及应用前景。Black silicon with quasi-regular arrays of micrometer-sized spikes, which is obtained by irradiating the surface of a Si wafer with ultrafast laser pulses in the presence of a chalcogen-bearing gas, or prepared by ion implantation and pulsed-laser-melting-induced rapid solidification, holds great promise in the preparation of high performance intermediate band solar cells. This new material has unusual optical and electrical properties, such as strong absorption of light with wavelength between 0.25/~m and 17/~m, nice field emission characteristics and so on, offers silicon many new features. Professor Mazur predicted that black silicon would have incomparable superiority to other materials in solar cell field. Besides, black silicon has important potential applications in the fields of detector, sensor, display technology, microelectronics and so on. The forming mechanism, recent development, photoelectric characteristics and application prospect of black silicon are introduced in this paper.

关 键 词：材料 黑硅 光电探测器 太阳能电池 超快激光 

分 类 号：O472.3[理学—半导体物理]