表面碳化的硅纳米孔柱阵列的H2S室温电容传感特性  

Room-Temperature H_2S Capacitive Sensing Properties of Surface-Carbonized Silicon Nanoporous Pillar Array

作　　者：王海燕[1,2] 王伶俐[1] 胡青飞[1] 李新建[1] 

机构地区：[1]郑州大学物理工程学院,材料物理教育部重点实验室,郑州450052 [2]郑州轻工业学院技术物理系,郑州450002

出　　处：《传感技术学报》2012年第1期1-5,共5页Chinese Journal of Sensors and Actuators

基　　金：国家自然科学基金项目(11074224);河南省重大科技攻关项目(082101510007)

摘　　要：通过将硅纳米孔柱阵列(Si-NPA)进行高温碳化处理,制备出一种SiC/Si-NPA复合纳米体系。对SiC/Si-NPA的表面形貌和结构表征揭示,生长于Si-NPA上的SiC薄膜由具有立方结构的SiC纳米颗粒组成,厚度为～200 nm。SiC/Si-NPA整体上保持了Si-NPA原有的柱状阵列结构特征。对浓度介于0～1 200×10-6的H2S气体的室温传感性能测试表明,SiC/Si-NPA对H2S气体的电容响应灵敏度可高达790%,而其对400×10-6浓度H2S气体的响应和恢复时间则分别为170 s和200 s,元件具有较好的测量重复性和稳定性。SiC/Si-NPA可能是一种室温条件下较为理想的H2S气体传感材料。Through a high-temperature thermal treatment process, the surface of silicon nanoporous pillar array （ Si- NPA） was carbonized and a SiC/Si-NPA nanocomposite system was prepared. The characterization on the surface morphology and structure disclosed that the SiC film grown on Si-NPA was composed of cubic-structure SiC nanoparticles with a thickness of -200 nm. The architectural feature of the regular pillar array for Si-NPA was remained in $iC/Si-NPA. The measurements on the room-temperature H2S sensing properties in a gas concentration range of 0 -1 200×10-6 proved that the capacitive response sensitivity of SiC/Si-NPA to H2S could be as high as 790% ,while the response and recovery times obtained for H2S gas with a concentration of 400 × 10-6 were determined to be - 170 s and 200 s, respectively. The sensor exhibited an excellent measurement reproducibility and stability. Our results indicated that SiC/Si-NPA might be an ideal sensing material for developing H2S gas sensors being operated at room temperature.

关 键 词：H2S气体传感器 SIC 硅纳米孔柱阵列 高温碳化 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]