退火处理对SnO2：F薄膜光电性能的影响  

Effects of Post Annealing Atmosphere on Electrical and Optical Properties of SnO_2:F Thin Films

作　　者：李铭[1] 高倩[1] 刘涌[1] 宋晨路[1] 韩高荣[1] 

机构地区：[1]浙江大学材料科学与工程学系,硅材料国家重点实验室,浙江杭州310027

出　　处：《材料科学与工程学报》2012年第1期132-135,共4页Journal of Materials Science and Engineering

基　　金：国家科技支撑计划资助项目(2011BAE14B02)

摘　　要：SnO2∶F薄膜作为low-e玻璃的表面功能层材料,广泛应用于节能镀膜玻璃。Low-e玻璃在后期退火(深加工)后,其性能的变化已经引起了学术研究和实际应用方面的的关注。我们对于用化学气相沉积法在玻璃表面沉积的约250nm厚的SnO2∶F薄膜进行不同的退火处理。并通过一系列的研究,结果发现,薄膜的结构、组成、电学、光学性能在氮气和空气两种不同的退火气氛下会有显著的变化。SnO2∶F薄膜的Low-e性能经过空气中高温退火后下降明显。通过计算对比退火后SnO2∶F薄膜的晶格常数和晶胞尺寸,提出了一种对于薄膜Low-e性能下降的合理解释。The SnO2：F thin films with low-emission property have been widely used as a dominating energy saving glass.Effect of post annealing treatment on the low-emission has attracted attention for both academic research and practical applications worldwide.In this work,different annealing approaches were carried out on the as-deposited SnO2：F（~250nm,with ~20nm SiO2 barrier on glass substrate） glass.It was found that the structural,compositional,electrical,and optical characteristics were significantly influenced by annealing atmosphere,under air or nitrogen.By calculating the lattice parameters and volume data of the unit cells for SnO2：F thin films,a reasonable explanation of the decrease in low-e property was proposed.

关 键 词：LOW-E SnO2∶F薄膜 退火 常压化学气相沉积 

分 类 号：O484.4[理学—固体物理]