Al-N共掺杂p型ZnO薄膜制备及电学性能的研究  

Preparation and Characteristics Research of Al-N Codoped p-type ZnO Films

作　　者：梁薇薇[1] 孔春阳[1] 秦国平[1,2] 阮海波[2] 

机构地区：[1]重庆师范大学物理与电子工程学院,重庆400047 [2]重庆大学物理学院,重庆400030

出　　处：《重庆师范大学学报（自然科学版）》2012年第2期68-71,共4页Journal of Chongqing Normal University:Natural Science

基　　金：重庆市自然科学基金(No.CSTC2011BA4031);重庆师范大学青年基金(No.09XLS04)

摘　　要：利用射频磁控溅射技术在石英玻璃上制备了ZnO:Al薄膜,继而N离子注入实现薄膜的Al-N共掺杂,随后进行了不同温度和时间的热处理。并借助X射线衍射(XRD)、霍耳测试(Hall)、X射线光电能谱仪(XPS)等手段对ZnO薄膜的性能进行了表征。实验结果表明,Al-N共掺杂ZnO薄膜在578℃退火8 min表现出较稳定的p型导电,其载流子数高达1×1018～6×1018个·cm-3,对应的电阻率为1～9Ω·cm,迁移率为1～2 cm2·V-1·s-1。与单掺N相比,实现p型导电所需的退火温度有明显降低,这很可能与Al的掺入有关。此外,XPS测试结果证实大量的Ni取代O空位是薄膜p型导电的根本原因。A1-N codoped ZnO thin films on quartz glass substrates can be fabricated by using radio frequency magnetron sputtering technique and then by combining with N-implantation. The effects of thermal annealing on the structure and electrical properties of ZnO films are investigated by x-ray diffraction （XRD） , Hall measurements system and x-ray photoelectron spectroscopy （XPS）. The exper- imental results suggest that the film annealed for 8 min at 578℃ exhibits the optimal p-type electrical properties with hole concentration of 1×10^8 -6x10^18 cm^-3 , low resistivity of about 1 -9 Ω· cm, and hall mobility of 1 -2 cm^2 ·V^-1 · s^-1. Compared with the mono- doping N, the annealing temperature for realizing the p-type conductivity decreases significantly owing to the incorporation of A1. Addi- tionally, the substitution of the 0 vacancy for N is the origin of p eonductivity of N-A1 eodoped ZnO films by analysis of XPS.

关 键 词：Al-N共掺 p-ZnO N离子注入 XPS 

分 类 号：O47[理学—半导体物理]