Distribution of electric field and design of devices in GaN avalanche photodiodes  

作　　者：WU LiangLiang ZHAO DeGang DENG Yi JIANG DeSheng ZHU JianJun WANG Hui LIU ZongShun ZHANG ShuMing ZHANG BaoShun YANG Hui 

机构地区：[1]State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences,Suzhou 215125,China

出　　处：《Science China(Physics,Mechanics & Astronomy)》2012年第4期619-624,共6页中国科学：物理学、力学、天文学（英文版）

基　　金：supported by the National Science Fund for Distinguished Young Scholars (Grant No. 60925017);the National Natural Science Foundation of China (Grant Nos. 10990100,60836003 and 60776047)

摘　　要：We have investigated the distribution of the electric field in p-i-n GaN avalanche photodiodes under different reverse bias values. type and separate absorption and multiplication （SAM） type We have also analyzed the influences of the parameters of each layer, including width and concentration, on the distribution of the electric field, especially on the breakdown voltage. It is found that a relatively high concentration of p-GaN （higher than 1×10^18 cm-3） and low cartier concentration of i-GaN （lower than 5×1016 cm-3） are helpful to restrict the electric field and reduce the breakdown voltage. In a SAM （p-i-n-i-n） structure, a suitable choice should be made for the concentration and thickness of the intermediate n-GaN layer in order to decrease breakdown voltage and prevent the device from degenerating into a p-i-n structure. Finally, the optimized material parameters of each layer are proposed.We have investigated the distribution of the electric field in p-i-n type and separate absorption and multiplication(SAM) type GaN avalanche photodiodes under different reverse bias values.We have also analyzed the influences of the parameters of each layer,including width and concentration,on the distribution of the electric field,especially on the breakdown voltage.It is found that a relatively high concentration of p-GaN(higher than 1×10 18 cm 3) and low carrier concentration of i-GaN(lower than 5×10 16 cm 3) are helpful to restrict the electric field and reduce the breakdown voltage.In a SAM(p-i-n-i-n) structure,a suitable choice should be made for the concentration and thickness of the intermediate n-GaN layer in order to decrease breakdown voltage and prevent the device from degenerating into a p-i-n structure.Finally,the optimized material parameters of each layer are proposed.

关 键 词：GAN avalanche photodiodes distribution of electric field 

分 类 号：TN364.2[电子电信—物理电子学] O441.1[理学—电磁学]