梯形衬底大光腔可见光AlGaAs半导体激光器  

Visible AIGaAs TS semiconductor laser with a large optical cavity

作　　者：陈国鹰[1] 刘文杰 张兴德[2] 

机构地区：[1]河北工学院 [2]长春光机学院

出　　处：《中国激光》1990年第3期159-162,共4页Chinese Journal of Lasers

摘　　要：采用液相外延技术,试制了梯形衬底大光腔(LOC)可见光AlGaAs半导体激光器。其波长为717.2～770.0nm,室温(298K)连续工作阈值电流为300mA,在1.5倍阈值时可实现单纵模、基横模工作。本文给出了器件的一些电学和光学特性.Visible AlGaAs terraced substrate semiconductor lasers with a large optical cavity has been fabricated. Its wavelength ranges from 717.2nm to 770.0nm, threshold current is 300mA at room temperature CW operation. It operates with a single mode at 1.5 times threshold. Some of the electrical and optical properties of the device are given.

关 键 词：半导体激光器 大光腔 ALGAAS 

分 类 号：TN248.4[电子电信—物理电子学]