铸造多晶硅中氧与碳在连续冷却中的沉淀研究  

OXYGEN AND CARBON PRECIPITATION IN CONTINUOUS COOLING IN CAST MULTICRYSTALLINE SILICON

作　　者：周潘兵[1] 龚洪勇[1] 陈泽文[1] 汤斌兵[1] 周浪[1] 

机构地区：[1]南昌大学材料科学与工程学院/太阳能光伏学院,南昌330031

出　　处：《太阳能学报》2012年第3期506-510,共5页Acta Energiae Solaris Sinica

摘　　要：实验结果显示,铸造多晶硅经1350℃加热1h后在高达10℃/s的速率下冷却仍会产生氧沉淀和热施主,生成氧沉淀的量和热施主的浓度在0.017～10℃/s范围内随冷却速率的增大而减少;与等温过程相比,连续冷却中的氧沉淀和热施主形成速率明显提高;碳在低至0.017℃/s冷却速率下也基本不发生沉淀析出。多晶硅片的少子寿命随冷却速率的增大而减小。基于硅中氧、碳的结构状态与扩散性质对上述沉淀动力学特征及其对多晶硅电学性能的影响进行了讨论。The experimental results showed that the oxygen precipitates and thermal donors can be formed in multi- crystalline silicon（mc-Si） in cooling from 1350℃ at a rate as fast as 10℃/s. With decrease of the cooling rate from 10℃/s, the amounts of oxygen precipitates and thermal donors increase. Compared with the above transforma- tions in isothermal processes, the transformations in continuous cooling are much faster. Carbon precipitates were almost not formed even in cooling as slow as 0. 017℃/s. Simultaneously, minority carrier lifetime in mc silicon showed a tendency of decrease with increasing of the cooling rate. The mechanisms for the observed effects were discussed based on states of oxygen and carbon and their diffusivity in silicon.

关 键 词：多晶硅 氧 碳 沉淀 

分 类 号：TK514[动力工程及工程热物理—热能工程]