单晶体外延膜四方畸变随深度变化的测试  

The Measurement of Single Lattice Epilayer Tetragonal Distortion Changed with Depths

作　　者：丁斌峰[1,2] 郑卫东[1] 

机构地区：[1]北京大学核物理与核技术国家重点实验室,北京100871 [2]廊坊师范学院物理与电子信息学院,河北廊坊065000

出　　处：《河北师范大学学报（自然科学版）》2012年第2期140-143,共4页Journal of Hebei Normal University：Natural Science

基　　金：国家自然科学基金(50802041;50872050);国家重点基础研究发展计划(973)(2011CB832923);廊坊师范学院重点项目(LSZZ201101)

摘　　要：采用卢瑟福背散射/沟道(RBS/C)实验,对有AlN插入层的GaN/Si样品进行了测试.通过测试分析计算表明:1)薄膜晶体的结晶品质良好,其最小产额χmin=2.5%;2)通过对RBS/C随机谱的模拟,得出样品结构为550 nm-GaN/20 nm-AlN/425 nm-GaN/Si;3)通过对GaN外延膜对称轴[0001]与非对称轴[1213]的角扫描,得出样品在120 nm处的四方畸变,为0.179%,表明GaN外延模的弹性应变在AlN缓冲层的作用下得到释放,避免了外延膜的碎裂,提高了GaN外延膜的结晶品质.The structure of GaN/Si with AlN interlayer is tested by Rutherford backscatter/channel（RBS/C） experiment.The experiment shows that GaN epilayer has high crystal quality,the minimum yields of the crystal is χmin=2.5 %.The selected sample structure is 550 nm-GaN/20 nm-AlN/425 nm-GaN/Si by simulating RBS/C random spectra.Through angular scans of the symmetry axis and asymmetry axis ,it can be calculated out the tetragonal distortion eT=0.179 % in 120nm depths.The elastic strain of GaN epilayer by AlN buffer layer is released,this can avoid epilayer cracks,and effectively increase the GaN crystalline quality.

关 键 词：卢瑟福背散射/沟道 最小产额 弹性应变 四方畸变 

分 类 号：O472.5[理学—半导体物理]