硅表面钝化及对异质结太阳电池特性的影响  

Silicon surface passivation and its effect on the performance of heterojunction solar cell

作　　者：柳琴[1,2] 刘成[1] 叶晓军[1] 郭群超 李红波 陈鸣波[1,2] 

机构地区：[1]上海空间电源研究所,上海200245 [2]上海太阳能工程技术研究中心有限公司,上海200241

出　　处：《功能材料与器件学报》2012年第1期40-45,共6页Journal of Functional Materials and Devices

基　　金：国家科技支撑计划(2010BAK69B25);国防基础科研计划(B0320110005);上海市科委科技攻关计划(10111100901)

摘　　要：研究了不同的晶体硅表面钝化方法,测试分析了硅片的少数载流子寿命以及对晶体硅/非晶硅异质结(HIT)太阳电池性能的影响。发现适当时间的HF溶液处理、氢等离子体处理和表面覆盖约3nm的本征非晶硅层能有效提高硅片的少子寿命,从而提高HIT太阳电池的开路电压。对电池制备工艺综合优化后,得到了基于n型晶体硅的光电转换效率为16.75%(Voc=0.596V,Jsc=41.605mA/cm2,FF=0.676,AM1.5,25℃)的HIT太阳电池。The surface passivation of silicon substrate has been studied, and the minority carrier lifetime of silicon substrate wafer along with its influence on the crystalline silicon / amorphous silicon heterojunc- tion （HIT） solar cell has been tested and analyzed. It is found that appropriate HF solution treatment, H -plasma treatment, as well as inserting approximately 3rim intrinsic amorphous silicon layer can signifi- cantly improve the minority carrier lifetime of silicon substrate, which can improve the open circuit volt- age of HIT solar cell sequentially. By comprehensively optimizing the process of HIT solar cell, the con- version efficiency of 16.75% （Voc = 596mV, Jsc = 41. 605mA/cm2, FF = 0. 676, AM1.5, 25 ℃ ） on n -type silicon substrate is obtained.

关 键 词：晶体硅/非晶硅异质结(HIT) 太阳电池 表面钝化 少子寿命 

分 类 号：TK514[动力工程及工程热物理—热能工程]