以Ni-Al为底电极的P(VDF-TrFE)铁电电容器的结构与性能  

Microstructure and Properties of P(VDF-TrFE) ferroelectric capacitor Using Ni-Al as the bottom electrode

作　　者：闫会芳[1] 赵庆勋[1] 付跃举[1] 刘卓佳[1] 张婷[1] 郭建新[1] 任国强[1] 刘保亭[1] 

机构地区：[1]河北大学物理科学与技术学院,保定071002

出　　处：《功能材料与器件学报》2012年第1期82-86,共5页Journal of Functional Materials and Devices

基　　金：国家自然科学基金(60876055;11074063);河北省自然科学基金项目(E2009000207;E2011201092);河北省应用基础研究计划重点项目(10963525D);高等学校博士点基金(20091301110002)

摘　　要：应用磁控溅射法制备Ni-Al和Pt薄膜,溶胶-凝胶法制备P(VDF-TrFE)铁电共聚物薄膜,在SiO2/Si(001)衬底上首次构架了Pt/P(VDF-TrFE)/Ni-Al异质结电容器。X射线衍射(XRD)结果表明:Ni-Al薄膜为非晶结构,P(VDF-TrFE)薄膜具有较好的结晶质量。研究发现,在20 Hz测试频率下,Pt/P(VDF-TrFE)/Ni-Al电容器具有饱和的电滞回线,在90 V驱动电压下,剩余极化强度与矫顽场分别为7.6μC/cm2和45.7 V。在外加电压为40 V时,薄膜的漏电流密度约为5.37×10-6 A/cm2。漏电机制研究表明,Pt/P(VDF-TrFE)/Ni-Al电容器满足欧姆导电机制。铁电电容器经过109极化反转后没有发现明显的疲劳现象。Pt/P （VDF-TrFE）/Ni-A1 heterostructure capacitors have been fabricated first on SiO2/Si （001） substrate, in which P（VDF-TrFE） copolymer ferroelectric film was prepared by sol-gel method and Ni-AI and Pt films were prepared by maguetron sputtering. X-ray analysis indicated that Ni-A1 film is amorphous, while P（VDF-TrFE） film is crystalline＆ It is found that Pt/P（ VDF-TrFE）/Ni-A1 capacitor possesses well saturated loops, the remnant polarization and coercive voltage areT. 6 μC/cm2 and 45.7 V, respectigatively, at applied voltage of 90 V and 20 Hz. The leakage current density of the capacitor, measured at 40 V, is -5.37 × 10-6A/cm2. Further analyses indicated that the Pt/P（VDF-TrFE）/Ni-A1 ferroelectric capacitors satisfies the ohmic conduction behavior. Moreover, No obvious fatigue can be found the capacitors up to 109 swithching cycles.

关 键 词：P(VDF-TrFE) 铁电薄膜 非晶Ni-Al 溶胶-凝胶 

分 类 号：TN304.12[电子电信—物理电子学]