高保真度压印光刻图形质量研究  

Quality research of high-conformity patterning for imprint lithography

作　　者：严乐[1] 卢秉恒[2] 

机构地区：[1]北京信息科技大学机电工程学院,北京100192 [2]西安交通大学机械制造系统工程国家重点实验室,西安710049

出　　处：《北京信息科技大学学报（自然科学版）》2012年第1期31-34,共4页Journal of Beijing Information Science and Technology University

摘　　要：为提高纳米压印工艺的图形质量,在抗蚀剂涂铺之前,对硅基材料进行氧离子轰击表面改性,有效增强硅基材料对抗蚀剂的亲和性;采用PDMS软模具,脱模性能好,而且能够很好的清除图型母版和自身表面的杂质;利用高保真度加载工艺,图型横向和纵向复型误差小于14 nm;运用多元回归方法建立了所选温度测点的温度值与模具中心z向热误差之间的关系模型,并对热误差进行了补偿。实验结果表明,压印光刻工艺实现了图型特征的高保真度复制。In order to improve the quality of patterning for nanoimprint lithography, surface modification for silicon wafer has been made by bombardment of oxygen ions before covered with resists. This method can effectively heighten the affinity between silicon-based materials and the resists. In imprint lithography, PDMS has excellent demolding character and can eliminate the impurity of itself and the master. Using high fidelity imprint process, replication errors of vertical and lateral are less than 14 nm. A thermal error model in z direction is proposed and the thermal error is compensated. It is experimentally shown that a high-conformity feature can be achieved.

关 键 词：压印光刻 高保真度 模具 压印工艺 热误差 

分 类 号：TH112[机械工程—机械设计及理论] TH113.1