多晶硅薄膜太阳电池电子辐照研究  

Electronirradiation Study on Poly-Si Thin Films Solar Cells

作　　者：廖华[1] 林理彬[2] 刘祖明[1] 李景天[1] 胡志华[1] 杨培志[1] 涂洁磊[1] 马逊[1] 姚朝晖[1] 郝瑞婷[1] 王书荣[1] 

机构地区：[1]可再生能源材料先进技术与制备教育部重点实验室云南师范大学太阳能研究所云南省农村能源工程重点实验室,云南昆明650092 [2]四川大学物理系辐射物理及技术国家教育部重点实验室,四川成都610064

出　　处：《云南师范大学学报（自然科学版）》2012年第2期1-4,共4页Journal of Yunnan Normal University:Natural Sciences Edition

基　　金：国家自然科学基金云南联合基金资助项目(U1037604)

摘　　要：利用静电加速器对多晶硅薄膜太阳电池进行了电子辐照实验。电子能量为1MeV,分别以1014e/cm2、1015e/cm2和1016e/cm2电子辐照注量进行辐照,首次获得了多晶硅薄膜太阳电池在高注量的电子辐照后,性能衰降比晶体硅大的结果。结合太阳电池理论和半导体材料的电子辐照效应给出了合理的解释。In this paper,it has been carried that electron irradiation experiments on poly-Si thin films solar cells through static accelerator.Energy of electron is 1MeV.The electron fluence of 1×1014/cm2,1×1015/cm2 and 1×1016/cm2 were used.The results that were irradiated by high electron fluence have been obtained first time.It shows that performance of poly-Si thin films solar cells have serious decay,compared with that of crystalline Si solar cells.This result has been explained properly by combined with theories of solar cell and electron irradiation effect of semiconductor.

关 键 词：多晶硅薄膜 太阳电池 电子辐照 

分 类 号：TM615[电气工程—电力系统及自动化]