增强型等离子体耦合干法刻蚀条件对PR胶灰化的影响  

Effects of PR Ashing in Process of Enhanced Capacitive Coupled Plasma Etch

作　　者：王亮 王文青 李鑫 吴成龙 郑云友 宋泳珍 李伟 李正勳 

机构地区：[1]北京京东方显示技术有限公司,北京100176

出　　处：《液晶与显示》2012年第2期204-207,共4页Chinese Journal of Liquid Crystals and Displays

摘　　要：通过改变压力、O2和SF6的流量研究干法刻蚀增强型阴极等离子耦合模式下对PR胶灰化速率、均匀性、H/V比值的影响。研究结果表明:在一定范围内随着压力的不断增大,PR的刻蚀速率逐渐增大,同时刻蚀的均匀性也逐渐变好,H/V逐渐变大;增加单组分SF6流量时刻蚀率和H/V比值均先增大后减小,而刻蚀均匀度数值有先减小后增大的趋势;增加单组分O2流量时PR灰化速率变化不明显,但刻蚀的均匀性逐渐变好,H/V比值先增大后减小;当O2和SF6的流量比例不变时,同时增加O2和SF6流量,PR灰化速率会先增加后减小,均匀性数值和H/V比值先减小后增大。The effects on the PR ashing rate,uniformity and H/V ratio were researched in process of ECCP dry etch model when the gas flow rate and pressure changed.The results show that PR ashing rate and the value of H/V would enlarge with the increasing pressure in a certain range.At the same time the uniformity also gradually changed for the better.The ashing rate would first increase and then decrease when the SF6 flow rate increased.But in this time the value of H/V had one contrary law.The PR ashing rate did not change significantly but the value of uniformity became smaller gradually when increased the O2 flow rate only.When the flow rate of SF6 and O2 increased but had one constant low proportion,the etching rate of PR increased first and then decreased,the uniformity and H/V ratio had one opposite change.

关 键 词：干法刻蚀 增强型阴极等离子耦合 PR灰化速率 

分 类 号：TN405.98[电子电信—微电子学与固体电子学]