量子点外延生长新模型(续)(英文)  

Novel Scenario for Epitaxial Growth Process of Quantum Dots (Continued)

作　　者：吴巨[1] 

机构地区：[1]中国科学院半导体研究所半导体材料重点实验室,北京100083

出　　处：《微纳电子技术》2012年第4期213-221,共9页Micronanoelectronic Technology

基　　金：National Natural Science Foundation of China(60876086,60976057,60990315)

摘　　要：3.2 Wetting Layer Tailored by Epitaxial Stress Most epitaxial films wet the substrates to var-ying degrees in heteroepitaxy.In the paradigm systems of the QD epitaxial growth,In As/GaAs(001)and Ge/Si(001),the critical wetting layer(WL)for3. 2 Wetting Layer Tailored by Epitaxial Stress Most epitaxial films wet the substrates to varying degrees in heteroepitaxy. In the paradigm systems of the QD epitaxial growth, InAs/OaAs （001） and Ge/Si（001）, the critical wetting layer （WL） for the layer-by-layer growth is a few atomic layers in thickness, beyond which quantum dots begin to form.

关 键 词：量子点 外延生长 EPITAXIAL WETTING INDIUM BONDS floating DIMER crystalline compressive 

分 类 号：TN304[电子电信—物理电子学]