An advanced alkaline slurry for barrier chemical mechanical planarization on patterned wafers  

作　　者：王辰伟 刘玉岭 牛新环 田建颖 高宝红 张晓强 

机构地区：[1]Institute of Microelectronics,Hebei University of Technology,Tianjin 300130,China [2]Market Information Department of CSPC Zhongqi Pharmaceutical Technology(Shijiazhuang)Co.,Ltd,Shijiazhuang 050051,China

出　　处：《Journal of Semiconductors》2012年第4期140-143,共4页半导体学报（英文版）

基　　金：Project supported by the Major National Science and Technology Special Projects(No.2009ZX02308);the National Natural Science Foundation of China(No.10676008);the Tianjin Natural Science Foundation of China(No.10JCZDJC15500);the Fund Project of Hebei Provincial Department of Education,China(No.2011128)

摘　　要：We have developed an alkaline barrier slurry （named FA/O slurry） for barrier removal and evaluated its chemical mechanical planarization （CMP） performance through comparison with a commercially developed barrier slurry. The FA/O slurry consists of colloidal silica, which is a complexing and an oxidizing agent, and does not have any inhibitors. It was found that the surface roughness of copper blanket wafers polished by the FA/O slurry was lower than the commercial barrier slurry, demonstrating that it leads to a better surface quality. In addition, the dishing and electrical tests also showed that the patterned wafers have a lower dishing value and sheet resistance as compared to the commercial barrier slurry. By comparison, the FA/O slurry demonstrates good planarization performance and can be used for barrier CMP.We have developed an alkaline barrier slurry （named FA/O slurry） for barrier removal and evaluated its chemical mechanical planarization （CMP） performance through comparison with a commercially developed barrier slurry. The FA/O slurry consists of colloidal silica, which is a complexing and an oxidizing agent, and does not have any inhibitors. It was found that the surface roughness of copper blanket wafers polished by the FA/O slurry was lower than the commercial barrier slurry, demonstrating that it leads to a better surface quality. In addition, the dishing and electrical tests also showed that the patterned wafers have a lower dishing value and sheet resistance as compared to the commercial barrier slurry. By comparison, the FA/O slurry demonstrates good planarization performance and can be used for barrier CMP.

关 键 词：barrier CMP alkaline barrier slurry surface roughness DISHING 

分 类 号：TN305.2[电子电信—物理电子学]