云南高校图书馆联盟文献共享服务平台- DISHING

检索规则说明：AND代表“并且”；OR代表“或者”；NOT代表“不包含”；(注意必须大写,运算符两边需空一格)

检索范例：范例一： (K=图书馆学 OR K=情报学) AND A=范并思　　　　范例二：J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual

全部期刊核心期刊 EI来源期刊 SCI来源期刊 CA来源期刊 CSCD来源期刊 CSSCI来源期刊

Novel Pattern-Centric Solution for Xtacking^TM AFM Metrology: 《Journal of Microelectronic Manufacturing》2019年第4期18-21,共4页Sicong Wang Jian Mi Abhishek Vikram Gao Xu Guojie Chen Liming Zhang Pan Liu; 3D NAND(three-dimensional NAND type)has rapidly become the standard technology for enterprise flash memories,and is also gaining widespread use in other applications.Continued manufacturing process improvements are es...; 关键词：VIA DISHING AFM Image METROLOGY 3D NAND

White Light Interference Solution for Novel 3D NAND VIA Dishing Metrology: 《Journal of Microelectronic Manufacturing》2019年第4期40-44,共5页Xiaoye Ding Sicong Wang Yi Zhou Yanzhong Ma Le Yang Chi Chen; In traditional 3D NAND design,peripheral circuit accounts for 20-30%of the chip realestate,which reduces the memory density of flash memory.As 3D NAND technology stacks to 128 layers or higher,peripheral circuits may ...; 关键词：WLI DISHING METROLOGY 3D NAND BONDING

Dishing Out A New Business: 《Beijing Review》2017年第37期34-35,共2页Deng Yaqing; With online food services added to the menu,the sector＇s main players are looking at acquisitions and diversification to beef up their share Lou Mei,a 30-year-old employee with a foreign Internet company in Beijing h...; 关键词：业务互联网公司发生变化饮食习惯多样化参与者 MEI 收购

Influence of oxidant passivation on controlling dishing in alkaline chemical mechanical planarization被引量：1: 《Journal of Semiconductors》2015年第12期147-150,共4页贾少华刘玉岭王辰伟闫辰奇; supported by the Special Project Items No.2 in National Long-Term Technology Development Plan,China(No.2009ZX02308); The article studied the electrochemical behavior of P2 alkaline polishing slurry. The main research is the changing discipline of Ecorr and Icorr in the Cu electrolyte at different concentrations of oxidant H2O2. It c...; 关键词：hydrogen peroxide PASSIVATION DISHING ALKALINE Cu CMP

Planarization effect evaluation of acid and alkaline slurries in the copper interconnect process被引量：1: 《Journal of Semiconductors》2015年第3期135-140,共6页胡轶李炎刘玉岭何彦刚; Project supported by the Special Project Items No.2 in National Long-Term Technology Development Plan(No.2009ZX02308);the Doctoral Program Foundation of Xinjiang Normal University Plan(No.XJNUBS1226);the Key Laboratory of Coal Gasification,Ministry of Education,and the Inorganic Chemistry Key Disciplines of Xinjiang Normal University; We observed and analyzed the acid and HEBUT alkaline of Cu chemical mechanical polishing （CMP） slurry to evaluate their effects. Material analysis has shown that the planarity surfaces and the removal rate of alkali...; 关键词：alkaline slurry chemical mechanical polishing remove rate ROUGHNESS dishing and erosion

Synergic effect of chelating agent and oxidant on chemical mechanical planarization被引量：1: 《Journal of Semiconductors》2015年第2期151-155,共5页刘伟娟刘玉岭; Project supported by the Natural Science Foundation of Hebei Province,China(Nos.E2013202247,E2014202147);the Department of Education-Funded Research Projects of Hebei Province,China(No.QN2014208); Chemically dominant alkaline slurry, which is free of BTA （benzotriazole） and other inhibitors, was investigated. The synergic effect of the chelating agent and oxidant on the chemical mechanical planarization （CMP...; 关键词：CMP theoretical model synergic ratios DISHING static etch rates

Effect of novel alkaline copper slurry on 300 mm copper global planarization: 《Journal of Semiconductors》2014年第9期171-174,共4页刘伟娟刘玉岭王辰伟陈国栋蒋勐婷袁浩博程鹏飞; Project supported by the Major National Science and Technology Special Projects(No.2009ZX02308); The copper removal rate and uniformity of two types copper slurries were investigated, which was performed on the 300 mm chemical mechanical planarization （CMP） platform. The experiment results illustrate that the r...; 关键词：CMP removal rate UNIFORMITY DISHING erosion endpoint detection

Effect of guanidine hydrochloride on removal rate selectivity and wafer topography modification in barrier CMP: 《Journal of Semiconductors》2014年第3期163-168,共6页李海龙康劲刘玉岭王辰伟刘虹高娇娇; Project supported by the Major National Science and Technology Special Projects(No.2009ZX02308);Tianjin Natural Science Foundation of China(No.10JCZDJC15500);the Fund Project of Hebei Provincial Department of Education,China(No.2011128); We propose an alkaline barrier slurry containing guanidine hydrochloride（GH） and hydrogen peroxide.The slurry does not contain any corrosion inhibitors, such as benzotriazole（BTA）. 3-inch samples of tantalum coppe...; 关键词：Guanidine hydrochloride selectivity dishing barrier layer CMP

Alkaline barrier slurry applied in TSV chemical mechanical planarization被引量：9: 《Journal of Semiconductors》2014年第2期137-140,共4页马锁辉王胜利刘玉岭王辰伟杨琰; Project supported by the Natural Science Foundation of Hebei Province,China(No.E2013202247);the Department of Education Fund of Hebei Province,China(No.2011128); We have proposed a TSV （through-silicon-via） alkaline barrier slurry without any inhibitors for barrier CMP （chemical mechanical planarization） and investigated its CMP performance. The characteristics of removal ...; 关键词：TSV alkaline barrier slurry removal rate SELECTIVITY DISHING

An advanced alkaline slurry for barrier chemical mechanical planarization on patterned wafers被引量：5: 《Journal of Semiconductors》2012年第4期140-143,共4页王辰伟刘玉岭牛新环田建颖高宝红张晓强; Project supported by the Major National Science and Technology Special Projects(No.2009ZX02308);the National Natural Science Foundation of China(No.10676008);the Tianjin Natural Science Foundation of China(No.10JCZDJC15500);the Fund Project of Hebei Provincial Department of Education,China(No.2011128); We have developed an alkaline barrier slurry （named FA/O slurry） for barrier removal and evaluated its chemical mechanical planarization （CMP） performance through comparison with a commercially developed barrier s...; 关键词：barrier CMP alkaline barrier slurry surface roughness DISHING

DISHING