Influence of oxidant passivation on controlling dishing in alkaline chemical mechanical planarization  

作　　者：贾少华 刘玉岭 王辰伟 闫辰奇 

机构地区：[1]Institute of Microelectronics, Hebei University of Technology

出　　处：《Journal of Semiconductors》2015年第12期147-150,共4页半导体学报（英文版）

基　　金：supported by the Special Project Items No.2 in National Long-Term Technology Development Plan,China(No.2009ZX02308)

摘　　要：The article studied the electrochemical behavior of P2 alkaline polishing slurry. The main research is the changing discipline of Ecorr and Icorr in the Cu electrolyte at different concentrations of oxidant H2O2. It compares potentiodynamic polarization curves in different P2 slurries and analyzes the passivation function of H2O2 acting on controlling dishing. The result implies that the potential increases gradually and then levels offwhile the current density on the contrary decreases with the augment of H2O2 concentration. In addition, dishing declines with the increasing of H2O2 along with the optimization of planarization of the alkaline P2 slurry.The article studied the electrochemical behavior of P2 alkaline polishing slurry. The main research is the changing discipline of Ecorr and Icorr in the Cu electrolyte at different concentrations of oxidant H2O2. It compares potentiodynamic polarization curves in different P2 slurries and analyzes the passivation function of H2O2 acting on controlling dishing. The result implies that the potential increases gradually and then levels offwhile the current density on the contrary decreases with the augment of H2O2 concentration. In addition, dishing declines with the increasing of H2O2 along with the optimization of planarization of the alkaline P2 slurry.

关 键 词：hydrogen peroxide PASSIVATION DISHING ALKALINE Cu CMP 

分 类 号：TQ050.1[化学工程]