Alkaline barrier slurry applied in TSV chemical mechanical planarization  

作　　者：马锁辉 王胜利 刘玉岭 王辰伟 杨琰 

机构地区：[1]Institute of Microelectronics,Hebei University of Technology [2]Hebei University of Technology

出　　处：《Journal of Semiconductors》2014年第2期137-140,共4页半导体学报（英文版）

基　　金：Project supported by the Natural Science Foundation of Hebei Province,China(No.E2013202247);the Department of Education Fund of Hebei Province,China(No.2011128)

摘　　要：We have proposed a TSV （through-silicon-via） alkaline barrier slurry without any inhibitors for barrier CMP （chemical mechanical planarization） and investigated its CMP performance. The characteristics of removal rate and selectivity of Ti/SiO2/Cu were investigated under the same process conditions. The results obtained from 6.2 mm copper, titanium and silica show that copper has a low removal rate during barrier CMP by using this slurry, and Ti and SiO2 have high removal rate selectivity to Cu. Thus it may be helpful to modify the dishing. The TSV wafer results reveal that the alkaline barrier slurry has an obvious effect on surface topography correction, and can be applied in TSV barrier CMEWe have proposed a TSV （through-silicon-via） alkaline barrier slurry without any inhibitors for barrier CMP （chemical mechanical planarization） and investigated its CMP performance. The characteristics of removal rate and selectivity of Ti/SiO2/Cu were investigated under the same process conditions. The results obtained from 6.2 mm copper, titanium and silica show that copper has a low removal rate during barrier CMP by using this slurry, and Ti and SiO2 have high removal rate selectivity to Cu. Thus it may be helpful to modify the dishing. The TSV wafer results reveal that the alkaline barrier slurry has an obvious effect on surface topography correction, and can be applied in TSV barrier CME

关 键 词：TSV alkaline barrier slurry removal rate SELECTIVITY DISHING 

分 类 号：TN305.2[电子电信—物理电子学]