对称式多谐振荡器仿真研究  

Research on symmetric multivibrator simulation

作　　者：张学文[1] 王成艳[1] 

机构地区：[1]湖北师范学院物理与电子科学学院,湖北黄石435002

出　　处：《湖北师范学院学报（自然科学版）》2012年第1期10-14,共5页Journal of Hubei Normal University(Natural Science)

基　　金：湖北师范学院教研项目Z0201121

摘　　要：在用multisim8进行对称式多谐振荡器仿真时,发现仿真结果与实际实物实验结果不符。测试和理论分析表明:出现这一现象是因为multisim8中的门电路模型不适用于输入、输出电流较大的数字电路的仿真。用能完整和全面地描述电路性能的TTL、CMOS反相器典型电路分别替代multisim8仿真软件中的TTL、CMOS非门。经测试,仿真结果与实物实验结果完全一致。Be symmetric with multisim8 in multivibrator simulation,we found that the simulation results with the actual physical experimental findings.Testing and theoretical analysis shows that.the emergence of this phenomenon is due to multisim8 the model does not apply to the input gate,output current is large digital circuit simulation.We replaced TTL,CMOS NOT gates of multisim8 typical simulation saftware with TTL CMOS inverter circuit that it can descript the circuit performance completly.After testing,the simulation results with exactly is same as physical results.

关 键 词：multisim8仿真 门电路 多谐振荡器 仿真测试 非门 

分 类 号：TN710[电子电信—电路与系统]