SiGe/Si异质结双极晶体管工艺技术研究  

Study on Process Technology of SiGe/Si HBT

作　　者：贾素梅[1,2] 杨瑞霞[2] 刘英坤[3] 邓建国[3] 高渊[2] 

机构地区：[1]邯郸学院信息工程学院,河北邯郸056001 [2]河北工业大学信息工程学院,天津300130 [3]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2012年第4期276-279,304,共5页Semiconductor Technology

基　　金：邯郸市科学技术研究与发展计划项目(1155103119-4)

摘　　要：介绍了多晶硅发射极双台面SiGe/Si异质结双极晶体管制作工艺流程。通过对LPCVD在n型Si衬底上外延生长SiGe合金层作为异质结双极晶体管基区、自中止腐蚀工艺制作发射区台面、多晶硅n型杂质掺杂工艺制作发射极、PtSi金属硅化物制作器件欧姆接触等工艺技术进行研究,探索出关键工艺的控制方法,并对采用以上工艺技术制作的多晶硅发射极双台面SiGe/Si异质结双极晶体管进行了I-V特性及频率特性测试。结果显示该器件饱和压降小,欧姆接触良好,直流电流放大倍数β随Ic变化不大,截止频率最高达到11.2 GHz。The fabricating process flow of poly silicon emitter double mesa SiGe/Si HBT was described. SiGe alloy layer grown by LPCVD, emitter mesa fabricated by ceasing etching process, poly silicon emitter prepared by n type doping poly silicon and ohmic contact obtained by PtSi metal silicide fabricating process were investigated. In addition, the critical process control method was also explored. The I-V characteristic and frequency parameters of SiGe/Si npn HBT were tested. The results show that Vsat, is small, ohmic contact is excellent and β changes a little with Io increasing, the maximum cutoff frequency fT is 1 1. 2 GHz.

关 键 词：SIGE/SI异质结双极晶体管 能带工程 掺杂工程 台面结构 关键工艺 

分 类 号：TN322.8[电子电信—物理电子学]