ZnO/ZnMgO异质结场效应管的制备与性能研究  

Fabrication and Characteristics of ZnO/ZnMgO Heterostructure Field-effect Transistor

作　　者：朱振邦[1] 顾书林[1] 朱顺明[1] 叶建东[1] 黄时敏[1] 顾然[1] 郑有炓[1] 

机构地区：[1]南京大学电子科学与工程学院和南京微结构国家实验室,江苏南京210093

出　　处：《发光学报》2012年第4期449-452,共4页Chinese Journal of Luminescence

基　　金：国家自然科学基金(61025020;60990312);国家"973"计划项目(2011CB302003);江苏省自然科学基金(SBK201121728)资助项目

摘　　要：利用等离子体增强化学气相沉积(PECVD)技术,在ZnO/ZnMgO异质结构上制备SiO2作为栅绝缘层,采用光刻与腐蚀工艺制备ZnO/ZnMgO异质结场效应管。电学性能测试及计算结果表明器件栅压调控作用明显。发现栅端漏电流对器件性能造成一定影响。在低温条件下,栅绝缘层产生钝化,从而能够改善器件的性能。The characteristics of a ZnO/ZnMgO heterostructure field-effect transistor （HFET） were reported in this paper. The HFET was grown on a-plane sapphire substrate by metal-organic vapor phase epitaxy （MOVPE） technology, and was fabricated by a conventional photolithography tech- nique combined with wet etching. The experiment results indicated that the HFET was an n-channel depletion type with a transconductance of 180 μS · mm-1 and mobility of 182 cm2 · V^-1 . s^-1 at room temperature. The property was limited by leakage current through the SiO2, gate insulator. At low temperature, the performance was improved due to the reduced leakage current.

关 键 词：ZnO/ZnMgO 异质结场效应管 迁移率 

分 类 号：TN386[电子电信—物理电子学]