非晶态碲镉汞薄膜晶化过程的椭圆偏振光谱研究(英文)  

Characterization of the Crystallization of Amorphous Hg_(0.2)Cd_(0.8)Te Using Spectroscopic Ellipsometry

作　　者：孔金丞[1] 王光华[1] 杨佩原[2] 杨丽丽[1] 李雄军[1] 赵俊[1] 张鹏举[1] 孔令德[1] 姬荣斌[1] 

机构地区：[1]昆明物理研究所,云南昆明650223 [2]中国兵器科学研究院,北京100089

出　　处：《红外技术》2012年第4期187-190,共4页Infrared Technology

基　　金：Project supported by the National Natural Science Foundation of China(No.60576069)

摘　　要：采用椭圆偏振光谱技术研究了非晶态碲镉汞薄膜在不同退火条件下的结构性能。结果表明非晶态碲镉汞薄膜在退火过程中的成核晶化是在薄膜内部均匀发生的,对于不同晶化程度的薄膜,其光学常数谱具有明显的特征,通过对光学常数谱的分析研究可以对非晶态碲镉汞薄膜的晶化程度进行量化表征,从而控制退火条件,优化材料质量。Spectroscopic ellipsometry（SE） has been used to characterize the formation of polycrystalline Hg0.8Cd0.2Te of 1 m thick a-Hg0.8Cd0.2Te films during solid phase crystallization at different annealing tem-peratures.The results from the Bruggeman EMA suggest that crystallite nucleation forms homogeneously from sites distributed uniformly within the penetration depth light.The evolution of the amorphous Hg0.8Cd0.2Te into crystalline structure was investigated,which shows the feasibility of Spectroscopic ellip-sometry in optimization and control of the HgCdTe anneal process for device applications.

关 键 词：椭圆偏振光谱 非晶态碲镉汞 晶化 

分 类 号：TN213[电子电信—物理电子学]