磁性隧道结电子输运特性的研究  

Study on electrons tunneling through magnetic junctions

作　　者：黄政[1] 胡浩[1] 

机构地区：[1]贵州大学光电子技术及应用重点实验室,贵阳550025

出　　处：《原子与分子物理学报》2012年第2期345-349,共5页Journal of Atomic and Molecular Physics

基　　金：国家自然科学基金项目(10865003);贵州省科学技术基金(黔科合J字[2010]2103号)

摘　　要：在Slonczewsik自由电子理论模型下,研究了两铁磁性金属电极被一平面磁性势垒隔开的磁性隧道结零偏压下的隧穿电导、自旋极化率和隧穿磁阻比率,研究表明隧道结的磁结构对隧穿电导和隧穿磁阻的值有很大的影响,当两磁性电极分子场方向相同,且都与势垒层分子场反平行时,隧穿电导数值达到最大,两者平行时,其数值最小,同时还分析了分子场的相对取向等对磁性隧道结自旋极化电子输运性质的影响.研究结果对自旋电子器件的设计具有一定的指导意义.For a magnetic tunneling junction with ferromagnetic metal/magnetic potential barrier layer/ ferromagnetic metal structure, tunneling conductance, spin polarization and tunneling magneto resistance rate under zero bias voltage are calculated in a quasifree electron model. The results show that TC and TMR strongly depend on the magnetization configuration of the junction. The TC reaches its maximums when the magnetic moments of the two electrodes are parallel to each other but antiparallel to that of the barrier, whereas the minimums appear when the magnetic moments of both electrodes and the barrier are parallel. The impact of molecular field orientation on tunneling of electrons is analyzed. It exhibits useful instructions for the design of spin electronic devices.

关 键 词：隧道结 隧穿电导 透射系数 

分 类 号：O485[理学—固体物理]