硅表面金刚石膜红外增透性能研究  

Research on the properties of diamond AR films on silicon substrate

作　　者：胡东平[1] 丰杰 李建国[1] 梅军[1] 

机构地区：[1]中国工程物理研究院总体工程研究所,绵阳621900

出　　处：《金刚石与磨料磨具工程》2011年第6期51-55,共5页Diamond & Abrasives Engineering

基　　金：中物院重大基金项目"金刚石SAW滤波器的基础问题研究"

摘　　要：通过在大面积区熔硅表面沉积金刚石膜,制作硅的红外增透膜。经扫描电镜观察,金刚石膜的颗粒尺寸平均约2μm,晶体颗粒形状规则;测试单面镀膜的红外透过率最高达65%,双面镀膜红外透过率最高达84%;实验证明硅表面金刚石具有一定的抗热冲击性能;分析了硅表面金刚石薄膜的红外增透特性,提出了进一步提高金刚石膜红外增透性能的方法。Diamond films are deposited on large square melted silicon substrates to prepare anti-reflection（AR） films.The average size of particles of about 2 μm was observed by scanning electron microscope（SEM）.The infrared transmission ratio of single face coated silicon reached 65%,and that of double face coated silicon reached 85%.Test results show that the diamond AR films could resist certain thermal shock.The infrared AR features of diamond films were analyzed,and some methods were proposed for improving diamond film AR ability.

关 键 词：金刚石薄膜 增透膜 红外透过 

分 类 号：TQ164[化学工程—高温制品工业]