高剂量中子辐照6H-SiC晶体的退火特性  

Annealing Characteristics of Heavy Neutron-irradiated 6H-SiC Crystal

作　　者：祝威[1,2] 阮永丰[1] 陈敬[1] 马鹏飞[3] 王鹏飞[1] 黄丽[1] 

机构地区：[1]天津大学理学院,天津300072 [2]天津商业大学理学院,天津300134 [3]河南师范大学,新乡453007

出　　处：《硅酸盐通报》2012年第2期386-390,共5页Bulletin of the Chinese Ceramic Society

摘　　要：在温度为60～80℃的条件下用剂量为1.72×1019 n/cm2的中子对6H-SiC晶体进行了辐照,利用X射线衍射等方法观测了中子辐照引起的缺陷及其恢复。重点追踪6H-SiC的(006)、(0012)晶面的衍射峰并进行实验观测。中子辐照对晶体造成了严重的损伤,使其内部产生了大量的缺陷,在某些被测晶面甚至出现非晶化。通过等时退火,缺陷逐渐消失,晶格开始恢复,其恢复特性由退火温度决定。通过X射线衍射峰的峰高和峰型发现,在温度低于600℃时,辐照损伤几乎不变,超过600℃后,温度越高,晶格恢复现象越明显。原来经辐照呈非晶化的晶面逐渐恢复有序,(006)面衍射峰的半高宽随退火温度的升高呈线性恢复。利用此种线性规律可以制作无线传感器,从而实现对某些复杂环境的温场测试。6H-SiC single crystals were irradiated at approximately 60-80 ℃ to a neutron fluence of 1.72 X 10^19 n/cm2. The radiation damage and the defect recovery in the single crystals were investigated by X- ray diffraction meter. Focus on tracking diffraction peak of the plane （006）, （0012）of 6H-SiC single crystals. The experimental observation on diffraction peaks of different crystal faces shows that there are serious damages in the neutron-irradiated 6H-SiC crystals and amorphization appears at one of the measured planes. The restoration of crystal lattice occurred during the isochronal annealing process, and the recovery feature is depended on annealing temperature. The X-ray diffraction data show that the radiation damages remained almost unchanged below the temperature of 600 ℃, and the healing process got more and more obvious while the annealing temperature is beyond 600 ℃. It is found that beyond 600 ℃ the crystal structure gradually reordered and the FWHM （full width at half maximum） of face （006） peak reveals a linear recovery behavior made according to the linear recovery temperature environment. with increasing annealing law in order to achieve temperature. Wireless-sensor can be the measurement of the complicated

关 键 词：6H-SIC 中子辐照 缺陷 X射线衍射 

分 类 号：TB333[一般工业技术—材料科学与工程]