窄脉冲大电流半导体激光器驱动电路设计与仿真  

Design and simulation of laser diode driver with narrow pulse width and high peak circuit

作　　者：谢军华[1,2] 刘伟平[1,2] 黄红斌[1,2] 陈舜儿[1,2] 

机构地区：[1]暨南大学电子工程系,广州510632 [2]暨南大学光电信息与传感技术广东普通高校重点实验室,广州510632

出　　处：《激光杂志》2012年第2期8-10,共3页Laser Journal

基　　金：国家973计划项目(2010CB327806)资助;广东省教育部产学研结合项目(2009B090200023)资助

摘　　要：设计出了一种窄脉冲大电流的半导体脉冲激光器驱动电路,并对电路进行理论分析以及Multisim仿真研究。相比以往研究,本仿真研究中考虑了电路和LD本身的寄生参数,使得仿真与实际电路更加吻合。该电路结构简单,采用了专用的MOSFET硬件关断加速电路和电容充放电方式向负载提供瞬时窄脉冲大电流的脉冲输出,脉冲宽度低于2.5ns,上升时间低于3.5ns,峰值电流超过20A。Designed a narrow pulse width and high peak current pulse laser diode driver circuit,and the circuits have been analyzed,Multisim simulated.By contrast,the simulation took account the circuit and LD parasitic parameters,making the simulation more consistent with the actual circuit.The circuit structure is simple,circuit of the high speed switching part adopts the special MOSFET hardware acceleration shut off the circuit,as the energy storage,using capacitor charging and discharging way to provide instantaneous narrow pulse and large curront pulse output,pulse width are below 2.5 ns and rise time are below 3.5 ns,peak current more than 20 A.

关 键 词：半导体激光器驱动 窄脉冲大电流:高速开关 电容充放电:Multisim仿真 寄生参数 

分 类 号：TN248.4[电子电信—物理电子学]