用电导数技术筛选可见光半导体激光器  

Screening of Visible Semiconductor Lasers by Electrical Derivative Technique

作　　者：李红岩[1] 石家纬[1] 金恩顺[1] 齐丽云[1] 李正庭[1] 高鼎三[1] 

机构地区：[1]吉林大学电子工程系集成光电子国家重点实验室,长春130023

出　　处：《半导体光电》2000年第2期115-117,共3页Semiconductor Optoelectronics

摘　　要：对 6 0只 6 70nm可见光量子阱激光器进行电导数测试 ,讨论了电导数曲线及其参数与器件可靠性之间的关系 ,指出用m、h、b参数可以评价器件质量和可靠性。实验结果表明电导数测试是可见光半导体激光器快速筛选的好方法。The dependence of the electrical derivative curve and its parameters on the reliability of 670 nm visible quantum well semiconductor lasers is discussed. It is shown that quality and reliability of the device can be evaluated by electrical derivative parameters ( m, h, b ). The experimental results show that electrical derivative measurement can be applied to screen visible semiconductor lasers instantaneousuly.

关 键 词：半导体激光器 电导数 筛选 可见光 

分 类 号：TN248.4[电子电信—物理电子学]