化合物半导体材料的激光消融微区质谱特性的实验研究  

Laser Ablation Mass Spectroscopy Analysis of Compound Semiconductor Materials

作　　者：彭慰先[1] 蒋占魁[1] 

机构地区：[1]吉林大学物理系,长春130023

出　　处：《中国激光》2000年第5期411-414,共4页Chinese Journal of Lasers

基　　金：国家自然科学基金资助项目

摘　　要：采用一台 Q开关 Nd:YAG脉冲激光器的四倍频输出 (2 6 6 nm )作为消融激光 ,用反射型飞行时间质谱仪分析探测由激光与靶相互作用产生的离子 ,从得到的质量谱研究激光与半导体材料的相互作用。报告了这种相互作用的阈值特性、离子产额、质量分辨率等与激光通量密度的关系 ,给出了典型 Al Ga As和 In P材料的激光消融微区质谱。 In P的离子质谱表明非金属元素磷的二聚物离子 P2 的离子峰总是占优势的。A quadrupled output of a Q-switched Nd∶YAG laser (266 nm) was used for ablating semiconductor materials. The ions formed during ablating were analyzed by using a reflective time of flight mass spectrometer. Some characteristics of laser ablation of semiconductor materials, such as ion yields versus laser power, the threshold of laser irradiance, the laser power dependence of the resolution of mass spectra and the shift of peak positions were reported. Experimental results showed that P 2 + dimmer dominates in all mass spectra of InP. Typical mass spectra of Al 0.3 Ga 0.7 As and InP are shown.

关 键 词：激光消融 质谱 化合物半导体材料 

分 类 号：TN304.2[电子电信—物理电子学]