脉冲强激光辐照半导体材料损伤效应的解析研究  

An Analytical Investigation on Semiconductor Material Damage Induced by Pulsed High-power Laser Beams

作　　者：强希文[1] 刘峰[1] 张建泉[1] 

机构地区：[1]西北核技术研究所,西安710024

出　　处：《光电子技术》2000年第1期52-58,共7页Optoelectronic Technology

摘　　要：研究了强激光辐照半导体材料Insb时的热输运、自由载流子输运和光子输运过程，探讨了激光对半导体材料的损伤机理。为半导体材料的辐射效应和抗辐射加固技术提供了一个理论证据。It is given that an analytical investigation on thermal, free carrier, and photon transport of semiconductor InSb material which is irradiated by pulsed high-power laser beams. The damage mechanism of semiconductor material is discussed. From these results, the theoretical basis of laser irradiating effects and hardening techniques on semiconductor materials is obtained.

关 键 词：强激光 半导体材料 辐照效应 损伤机理 

分 类 号：TN304[电子电信—物理电子学]