n-ZnO/i-ZnO/p-nc-Si结构薄膜太阳能电池的模拟研究  

Simulation of n-ZnO/i-ZnO/p-nc-Si thin film solar cell

作　　者：林家辉[1] 彭启才[1] 

机构地区：[1]西华大学材料科学与工程学院,四川成都610039

出　　处：《电子元件与材料》2012年第5期27-30,共4页Electronic Components And Materials

基　　金：教育部"春晖计划"资助项目(No.z2009-1-61011)

摘　　要：运用AMPS-1D软件对n-ZnO/i-ZnO/p-nc-Si结构的异质结薄膜太阳能电池进行了模拟,探讨了补偿掺杂i-ZnO层厚度变化以及界面态的引入对太阳能电池的开路电压、短路电流密度、填充因子以及转换效率的影响,并对其机理进行了分析。结果表明:界面态的存在会大幅降低太阳能电池的效率,在理想情况下太阳能电池的转换效率可以达到25.381%。The performance of the n-ZnO/i-ZnO/p-nc-Si thin film solar cell was simulated by using of AMPS-1D（Analysis of Microelectronic and Photonic Structures）.The effects of the compensating doping i-ZnO layer thickness and interface states on the open circuit voltage,short-circuit current,fill factor and conversion efficiency of the solar cell were investigated.The mechanism of the energy conversion was studied.The results show that interface states significantly reduces the conversion efficiency of the solar cell.It is found in the simulation that a conversion efficiency of 25.381% is obtained in the ideal case.

关 键 词：太阳能电池 ZNO NC-SI 厚度 

分 类 号：TK513.5[动力工程及工程热物理—热能工程]