亚微米IC器件中接触孔的填充和铝金属化工艺的技术  

Technological Investigation of Contact Hole Filling and Aluminum Metallization Process in Sub\|Micron IC Devices

作　　者：梁京 黄榕旭 郑国祥[1] 林健 庞海舟 宗祥福[1] 

机构地区：[1]复旦大学材料科学系,上海200433 [2]上海先进半导体制造有限公司,上海200233

出　　处：《Journal of Semiconductors》2000年第6期614-619,共6页半导体学报（英文版）

摘　　要：在亚微米 IC器件的铝金属化工艺中 ,采用了阻挡层和硅化物后 ,发现随着铝淀积温度的升高 ,铝的阶梯覆盖率有所提高 .为克服高温淀积带来的问题 ,采用了两步的冷 /热铝溅射和浸润层等工艺代替原来的铝溅射 .通过研究和一系列的比较实验 ,发现影响铝填充性能的主要因素为 :热铝淀积温度、热铝淀积功率、Ti浸润层厚度及冷热铝厚度比 .由此得到了适合于实际亚微米It is found that the stepcoverage is improved with the increase of temperature by using barrier layer and silicides in the aluminum metallization process of a sub\|micron IC device. To solve the problem arising with the high\|temperature aluminum deposition, processes such as the cold/hot aluminum sputtering and wetting layer are adopted in stead of the warm aluminum sputtering. Through investigation and a series of comparison experiments, it is concluded that the main factors influencing the filling performance are hot\|aluminum deposition temperature, hot\|aluminum deposition power, thickness of Ti wetting layer and the thickness ratio of cold/hot aluminum. The optimized processing conditions are achieved, which suit the practical sub\|micron IC device manufacture.

关 键 词：填充 接触孔 金属化工艺 亚微米集成电路 

分 类 号：TN305[电子电信—物理电子学]