应力下LDD nMOSFET栅控产生电流退化特性研究  

Degradation of Gate-controlled Generation Current under Stresses in LDD nMOSFET' s

作　　者：陈海峰[1] 过立新[1] 杜慧敏[1] 

机构地区：[1]西安邮电学院电子工程学院,西安710121

出　　处：《固体电子学研究与进展》2012年第2期115-119,共5页Research & Progress of SSE

基　　金：陕西省教育厅专项科研基金项目(11JK0902);西安市应用材料创新基金项目(XA-AM-201012);西安邮电学院青年教师科研基金项目(ZL2010-19)

摘　　要：研究了LDD nMOSFET栅控产生电流在电子和空穴交替应力下的退化特性。电子应力后栅控产生电流减小,相继的空穴注人中和之前的陷落电子而使得产生电流曲线基本恢复到初始状态。进一步发现产生电流峰值在空穴应力对电子应力引发的退化的恢复程度与阈值电压和最大饱和漏电流不同。电子应力中陷落电子位于栅漏交叠区附近的沟道侧I区和LDD侧的II区中氧化层中。GIDL应力中,空穴注入进II区中和了陷落电子,使得产生电流的退化基本得到恢复,但这些空穴并未有效中和I区中的陷落电子,因此阈值电压和最大饱和漏电流退化恢复的程度较小,分别为20%和7%。The degradation of gate-controlled generation current IGD under hot electron stressand sequent hot hole stress in LDD nMOSFET＇ s is studied. IGD decreases after the hot electronstress （EIS） and is recovered to the initial value after the sequent hot hole stress （HIS）. The de-gree of the HIS recovering the degraded IGD induced by the previous HES is different from thethreshold voltage VrH and the saturation drain current IDSAT. This is because the trapped electronsduring EIS are located at I region above the end of channel and II region above LDD in the gate todrain overlap area. The holes injected in HIS neutralize the trapped electrons of II region and re-covers the IGD completely. However, these injected holes can not neutralize the trapped electronin I region. This results in the small recoveries of degradations of VTH and IDsAT and they are 20%and 7%, respectively.

关 键 词：轻掺杂漏区 产生电流 应力 阈值电压 饱和漏电流 

分 类 号：TN386.1[电子电信—物理电子学]