GaAs/InP的键合界面热应力分析  

Analysis of the Stress of GaAs/InP Bonded Interface

作　　者：于丽娟[1] 晏磊[1] 

机构地区：[1]中国科学院半导体研究所集成光电国家重点实验室,北京100083

出　　处：《固体电子学研究与进展》2012年第2期120-125,共6页Research & Progress of SSE

摘　　要：采用双层条状金属热应力模型,用MATLAB方法对退火过程中GaAs/InP晶片间的应力和双轴弹性形变能进行模拟和分析。结果表明:将InP剪薄至200μm,GaAs剪薄至175μm,剪应力取得了一个相对的小值,而剥离应力更是被完全消除,这时正应力也相对较小。而按照一定的比例适度剪薄两侧晶片的厚度,可以使得两侧的双轴形变能减小到原来的一半以下。通过减薄键合晶片的厚度可以得到较好的键合质量。另外,不管那一种应力都随退火温度的升高而快速增加,所以实验中一定保持低的退火温度,通常小于300°C为宜。By using bimetal strip stresse model,interfacial thermal stress distribution and the specific elastic biaxial strain energy（Eel1 and Eel2） bonded in GaAs/InP wafer are theoretically investigated with MATLAB.The peeling stress was almost eliminated and shearing stress was redused near minimum when InP was thinned to 200 μm and GaAs was thinned to 175 μm.The value of Eel1 and Eel2 dropped down to less than half of the original.Interfacial thermal stress was changed largely along with temperature.These results show that we can get GaAs/InP bonding quality much better by controlling wafer thicknesses and anneal temperature.

关 键 词：砷化镓/磷化铟 键合 热应力 退火温度 晶片厚度 

分 类 号：TN305[电子电信—物理电子学]