基于ITO键合技术的白光发光二极管特性研究  

The Properties of the ITO Bonded GaN/GaAs White Emitting Diode

作　　者：顾晓玲[1] 曾孝平[1] 沈光地[2] 李国军[1,3] 

机构地区：[1]重庆大学通信工程学院,重庆400044 [2]北京工业大学光电子技术实验室,北京100022 [3]重庆通信学院,重庆400035

出　　处：《固体电子学研究与进展》2012年第2期170-174,179,共6页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(60971016);中央高校基本科研业务费资助项目(CDJXS10 16 11 13)

摘　　要：根据色度学原理计算,通过选择匹配的基色波长和功率,制备了GaN/GaAs基ITO键合白光发光二极管(LED),得到了等能白光。通过测试发现,在20mA下,电压为5.3V,此方法是制备固态照明用白光LED的有效方法之一。The white light emitting diode was made by GaN/GaAs wafer bonded in our experiment.With this method,we obtained equal energy white light by choosing the primary colors with matched wavelength and light power through color matching calculation.The forward voltage of the diodes at the typical driving current of 20 mA was 5.3 V.This data is lower than the voltage of the ones using the tunneling junction.This method has great potential in the solid-state lighting.

关 键 词：键合 白光发光二极管 两基色 

分 类 号：TN312.8[电子电信—物理电子学]