InGaAs/InGaAlAs应变补偿量子阱激光器及其温度特性研究  

InGaAs/InGaAlAs Strain compensated Multiple-quantum well Lasers with Improved Temperature Characteristic

作　　者：孙可[1] 王健华[1] 彭吉虎[1] 

机构地区：[1]清华大学电子工程系集成光电子学国家重点实验室,北京100084

出　　处：《高技术通讯》2000年第2期50-52,共3页Chinese High Technology Letters

基　　金：国家自然科学基金!资助项目 ( 6 94870 0 4)

摘　　要：实现了InGaAs/InGaAlAs应变补偿量子阱激光器的室温脉冲激射,激射波长为156μm,阈值电流密度小于185kA/cm2,脊波导结构的激光器最低阈值电流为35mA。The pulsed operation InGaAs/InGaAlAs strain compensated multiple quantum well lasers at room temperature is implemented. The working wavelength is 1.56μm, the threshold current density is less than 1.85kA/cm 2, and the threshold current is 35mA for ridge waveguide structure. The incorporation of compensated strain, which make the more well design applicable, leads to an obvious improvement on the device temperature characteristic.

关 键 词：应变补偿 激光器 量子阱 温度特性 

分 类 号：TN365[电子电信—物理电子学]