基于硅纳米线缺陷辅助隧穿肖特基二极管研究  

Study on Trap-Assisted Tunneling Schottky Diode Based on Silicon Nanowires

作　　者：王志亮[1] 张健[1] 

机构地区：[1]华东师范大学信息科学技术学院,上海200241

出　　处：《南通大学学报（自然科学版）》2012年第1期1-5,共5页Journal of Nantong University(Natural Science Edition)　

基　　金：国家自然科学基金项目(61076070);上海市教委创新计划项目(09ZZ46);江苏省高校自然科学研究项目(11KJB510023);南通大学自然科学基金项目(10Z023;10Z025)

摘　　要：介绍了铂（Pt）/p型硅纳米线（p-SiNWs）肖特基二极管的制备方法,在300~370 K温度范围内,测量了Pt/p-SiNWs肖特基二极管I-V特性.根据热发射（TE）、产生-复合（GR）,隧穿（TU）和漏电流（RL）理论模型,拟合了肖特基二极管电流传输机制,拟合结果说明Pt/p-SiNWs肖特基二极管中电流传输机制为缺陷辅助隧穿机制.此外,根据实验数据计算了肖特基二极管主要特征参数,二极管理想因子n随温度升高而减小,势垒高度Φb0随温度升高而增加,并且隧穿参数E0不随温度而变化.The Schottky diodes of Platinum（Pt） thin film on p-silicon nanowires（p-SiNWs） tips are fabricated.The current-transport mechanism of Pt/p-SiNWs is defect-assisted tunneling（TU）.The experimental I-V data is measured and fitted to the analytical expressions of the thermionic emission（TE）,generation-recombination（GR）,TU,and leakage（RL） current-transport mechanisms in the temperature range of 300~370 K and voltage range of-1~1 V.The TU fitting data is in an excellent agreement with the experimental data.Meanwhile,the main characteristic parameters of Schottky are calculated based on the experimental data.Ideality factor n decreases with increasing temperature.The zero-barrier height Φb0increases with increasing temperature and the tunneling parameter E0 is independent of the temperature,which all are closely followed the TU current-transport mechanism.Hence,those results indicate that defect-assisted tunneling is dominant current-transport mechanism in Pt/p-SiNWs Schottky diodes.

关 键 词：硅纳米线 缺陷辅助隧穿 肖特基二极管 电流传输 

分 类 号：TN311.7[电子电信—物理电子学]