基于负微分电阻特性的SET/CMOS反相器  

SET/CMOS Inverter Based on Negative Differential Resistance Characteristics

作　　者：魏榕山[1] 陈寿昌[1] 陈锦锋[1] 何明华[1] 

机构地区：[1]福州大学物理与信息工程学院,福建福州350108

出　　处：《华南理工大学学报（自然科学版）》2012年第3期69-73,共5页Journal of South China University of Technology(Natural Science Edition)

基　　金：国家"973"计划项目(2011CB808000);福建省科技厅重大专项(2009HZ0007-1)

摘　　要：基于单电子晶体管(SET)和PMOS管串联产生的负微分电阻(NDR)特性,提出了一种新型的SET/CMOS反相器.该反相器利用NDR特性与NMOS负载管的电流-电压特性构成两个单稳态点,实现反相功能.应用HSPICE仿真器,采用精准的单电子晶体管的子电路模型及22nm CMOS预测技术模型对该反相器进行仿真,结果表明:该反相器的功能正确,具有比传统CMOS反相器更低的功耗;与其它单电子反相器相比,该反相器可在室温下实现输出电压全摆幅,且具有较低的传输延迟.A novel hybrid SET/CMOS inverter is proposed in this paper based on the negative differential resistance（NDR） characteristics that are realized by connecting one single electron transistor（SET） and one PMOS transistor in series.In this inverter,two monostable points for realizing the inverting function are constructed by utilizing the NDR characteristics and NMOS transistor＇s current-voltage characteristics.By using a compact subcircuit model of the SET and a 22 nm predictive technology model（PTM） of the CMOS transistor,the operation of the hybrid SET/CMOS inverter is then simulated with an HSPICE simulator.The results show that the inverter works well,with its power consumption lower than that of the traditional CMOS inverter,and that the proposed inverter is superior to other SET inverters because it achieves a full-swing output voltage and a smaller transmission delay at room tempe-rature.

关 键 词：单电子晶体管 反相器 HSPICE仿真 负微分电阻 

分 类 号：TN402[电子电信—微电子学与固体电子学]