西门子CVD还原炉内硅棒生长环境的数值模拟  

Numerical Simulation of Polysilicon Rods' Growth Environment in Siemens CVD Reactor

作　　者：王子松[1] 黄志军[1] 覃攀[1] 雷雳光[1] 印永祥[1] 戴晓雁[1] 

机构地区：[1]四川大学化学工程学院,成都610065

出　　处：《人工晶体学报》2012年第2期507-512,共6页Journal of Synthetic Crystals

摘　　要：考虑包括热辐射在内的质量传递、动量传递、热量传递三维模型,利用流体力学计算软件,对18对棒西门子多晶硅CVD还原炉实际情况进行数值模拟。考察了两种进气方式下还原炉内的流场和温度场分布。计算结果表明,为了实现硅棒均匀沉积,与底盘上分散进气、中心集中出气的还原炉结构相比,中心集中进气、中环与外环之间分散出气的流场及温度场分布更为合理。后者可能有效避免气体在进出口间的"短路"现象,又使炉内各处温度分布更为均匀,减小硅棒不均匀生长现象。模拟结果还表明,采用典型工况的数据,还原炉中总能量损失占能量输入的78.9%,辐射热损失占总能量损失的70.9%,产品单位质量能耗为72.8 kWh./kg-1,与很多其他研究结果及实际相一致。This research takes use of computational fluid dynamic（CFD） to simulate the environment of the polysilicon production in chemical vapor deposition（CVD） reduction furnace with 18 pairs silicon rods,in which a 3D physical model of mass transfer,momentum transfer,heat transfer with radiation was considered.The profile of flow and temperature in the reactor for different arrangements of gas inlet and outlet was carried out.Among these arrangements,the gas inlet from center and outlet from holes decentralized on two circular rings at bottom of reactor is much more reasonable,by which the profile of temperature in reactor is more uniform,and the flow short-circuit between the entrance and exit can be avoided,both are in favor of the uniform and effective growth of silicon rods.Further more,the energy analysis for CVD process is conducted.The results showed that the total energy loss is about 78.9% of import energy,the radiation loss is about 70.9% of the total energy loss,the unit specific energy comsumption is around 72.8 kWh·kg-1,which are much agreement with that of other research and many practice.

关 键 词：计算流体力学 多晶硅 CVD还原炉 辐射热传递 

分 类 号：TQ018[化学工程]