3-D TCAD simulation study of the single event effect on 25 nm raised source-drain FinFET  

作　　者：QIN JunRui CHEN ShuMing CHEN JianJun 

机构地区：[1]School of Computer Science,National University of Defense Technology,Changsha 410073,China

出　　处：《Science China(Technological Sciences)》2012年第6期1576-1580,共5页中国科学（技术科学英文版）

基　　金：supported by the National Natural Science Foundation of China (Grant Nos. 60836004,61006070,and 61076025)

摘　　要：Using Technology Computer-Aided Design(TCAD) 3-D simulation,the single event effect(SEE) of 25 nm raised source-drain FinFET is studied.Based on the calibrated 3-D models by process simulation,it is found that the amount of charge collected increases linearly as the linear energy transfer(LET) increases for both n-type and p-type FinFET hits,but the single event transient(SET) pulse width is not linear with the incidence LET and the increasing rate will gradually reduce as the LET increases.The impacts of wafer thickness on the charge collection are also analyzed,and it is shown that a larger thickness can bring about stronger charge collection.Thus reducing the wafer thickness could mitigate the SET effect for FinFET technology.

关 键 词：FINFET single event effect single event transient charge collection 

分 类 号：TN386[电子电信—物理电子学] V443[航空宇航科学与技术—飞行器设计]